TK4A60DA 2008-12-05 1 toshiba field effect transistor silicon n channel mos type ( -mos ) TK4A60DA switching regulator applications ? low drain-source on resistance: r ds (on) = 1.7 ? (typ.) ? high forward transfer admittance: ? y fs ? = 2.2 s (typ.) ? low leakage current: i dss = 10 a (v ds = 600 v) ? enhancement-mode: v th = 2.4 to 4.4 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 600 v gate-source voltage v gss 30 v dc (note 1) i d 3.5 drain current pulse (t = 1 ms) (note 1) i dp 14 a drain power dissipation (tc = 25c) p d 35 w single pulse avalanche energy (note 2) e as 158 mj avalanche current i ar 3.5 a repetitive avalanche energy (note 3) e ar 3.5 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g. the a pplication of high temperature/current/voltage and the significant change in temperature, et c.) may cause this product to decreas e in the reliability significantly even if the operating conditions (i.e. operat ing temperature/current/voltage, etc. ) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/?derating concept and methods??) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 3.57 c/w thermal resistance, channel to ambient r th (ch-a) 62.5 c/w note 1: please use devices on conditions that the channel temperature is below 150c. note 2: v dd = 90 v, t ch = 25c (initial), l = 22.5 mh, r g = 25 , i ar = 3.5 a note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic sensit ive device. please handle with caution. unit: mm jedec ? jeita sc-67 toshiba 2-10u1b weight: 1.7 g (typ.) 1 3 2 1: gate 2: drain 3: source internal connection http://www..net/ datasheet pdf - http://www..net/
TK4A60DA 2008-12-05 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 30 v, v ds = 0 v ? ? 1 a drain cut-off current i dss v ds = 600 v, v gs = 0 v ? ? 10 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 600 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.4 ? 4.4 v drain-source on resistance r ds (on) v gs = 10 v, i d = 1.8 a ? 1.7 2.2 forward transfer admittance ? y fs ? v ds = 10 v, i d = 1.8 a 0.6 2.2 ? s input capacitance c iss ? 490 ? reverse transfer capacitance c rss ? 3 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 55 ? pf rise time t r ? 18 ? turn-on time t on ? 40 ? fall time t f ? 8 ? switching time turn-off time t off ? 55 ? ns total gate charge q g ? 11 ? gate-source charge q gs ? 6 ? gate-drain charge q gd v dd 400 v, v gs = 10 v, i d = 3.5 a ? 5 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 3.5 a pulse drain reverse current (note 1) i drp ? ? ? 14 a forward voltage (diode) v dsf i dr = 3.5 a, v gs = 0 v ? ? ?1.7 v reverse recovery time t rr ? 1000 ? ns reverse recovery charge q rr i dr = 3.5 a, v gs = 0 v, di dr /dt = 100 a/ s ? 5.0 ? c marking lot no. k4a60da part no. (or abbreviation code) a line indicates lead(pb)-free finish r l = 111 0 v 10 v v gs v dd 200 v i d = 1.8 a v out 50 duty 1%, t w = 10 s http://www..net/ datasheet pdf - http://www..net/
TK4A60DA 2008-12-05 3 0.1 0.1 1 10 1 100 v gs = 10, 15 v 10 0.1 10 0.1 1 25 100 tc = ? 55 c 10 1 0 8 12 16 20 0 i d = 3.5 a 4 8 12 16 20 0.9 1.8 4 10 0 0 2 4 6 8 1.6 8 tc = ? 55 c 25 100 3.2 4.8 6.4 5 4 3 2 0 0 8 16 20 v gs = 5.5v 7.5 10 8 12 4 7 6.5 6 1 2 1.6 0.8 0.4 0 0 1 2 3 4 5 v gs = 5 v 5.5 6 6.5 7 8 10 1.2 r ds (on) ? i d v ds ? v gs i d ? v ds ? y fs ? ? i d i d ? v ds forward transfer admittance ? y fs ? (s) drain current i d (a) drain current i d (a) drain-source voltage v ds (v) drain-source voltage v ds (v) gate-source voltage v gs (v) gate-source voltage v gs (v) drain current i d (a) drain current i d (a) i d ? v gs common source tc = 25c pulse test common source tc = 25c pulse test common source v ds = 20 v pulse test common source tc = 25 pulse test common source v ds = 10 v pulse test common source tc = 25c pulse test drain current i d (a) drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v) http://www..net/ datasheet pdf - http://www..net/
TK4A60DA 2008-12-05 4 0 0.1 ? 0.3 1 100 ? 0.6 ? 0.9 v gs = 0 v 10 3 1 5 ? 1.2 ? 1.5 10 0 4 8 v dd = 100 v v ds v gs 400 200 12 16 500 400 300 200 100 0 20 16 12 8 4 0 20 0 1 2 3 5 ? 80 ? 40 0 40 80 120 160 4 1 0.1 10 100 1000 10000 1 10 100 c iss c oss c rss 160 ? 40 0 40 80 120 ? 80 8 4.8 3.2 1.6 0 i d = 0.9 a 1.8 3.5 6.4 r ds (on) ? tc v th ? tc i dr ? v ds p d ? tc capacitance c (pf) drain power dissipation p d (w) drain-source on resistance r ds (on) ( ) drain reverse current i dr (a) gate threshold voltage v th (v) drain-source voltage v ds (v) drain-source voltage v ds (v) case temperature tc (c) drain-source voltage v ds (v) case temperature tc (c) case temperature tc (c) total gate charge q g (nc) gate-source voltage v gs (v) common source v gs = 10 v pulse test common source tc = 25c pulse test common source v gs = 0 v f = 1 mhz tc = 25c common source v ds = 10 v i d = 1 ma pulse test common source i d = 3.5 a tc = 25c pulse test capacitance ? v ds dynamic input / output characteristics 50 0 0 40 80 120 160 20 30 40 10 http://www..net/ datasheet pdf - http://www..net/
TK4A60DA 2008-12-05 5 0.001 0.1 0.01 1 10 100 10 1000 100 100 s * 1 ms * v dss max 0.1 1 0.01 10 0.1 1 10 100 1m 10m 100m 1 10 duty=0.5 0.2 0.1 single pulse 0.05 0.02 0.01 0.001 ?15 v 15 v i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 22.5 mh ? ? ? ? ? ? ? ? ? ???= v dd b vdss b vdss 2 il 2 1 as r th ? t w t p dm t duty = t/t r th (ch-c) = 3.57c/w e as ? t ch normalized transient thermal impedance r th (t) /r th (ch-c) pulse width t w (s) safe operating area drain current i d (a) drain-source voltage v ds (v) *: single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. i d max (pulsed) * i d max (continuous) * dc operation tc = 25c avalanche energy e as (mj) channel tempeature (initial) t ch (c) test circuit waveform 200 160 120 80 40 0 25 50 75 100 125 150 http://www..net/ datasheet pdf - http://www..net/
TK4A60DA 2008-12-05 6 restrictions on product use 20070701-en general ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. http://www..net/ datasheet pdf - http://www..net/
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